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HUF76609D3ST
DataSheets

HUF76609D3ST

MOSFET N-CH 100V 10A DPAK
Nambari ya Sehemu
HUF76609D3ST
Mtengenezaji/Chapa
ON Semiconductor
Mfululizo
UltraFET™
Hali ya Sehemu
Active
Ufungaji
Cut Tape (CT)
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 175°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
TO-252-3, DPak (2 Leads + Tab), SC-63
Kifurushi cha Kifaa cha Wasambazaji
TO-252AA
Upotezaji wa Nguvu (Upeo)
49W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
100V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
10A (Tc)
Rds On (Max) @ Id, Vgs
160 mOhm @ 10A, 10V
Vgs(th) (Max) @ Kitambulisho
3V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
16nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
425pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Upeo)
±16V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 21256 PCS
Maelezo ya Mawasiliano
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