Nunua Toshiba Semiconductor and Storage TPC8110(TE12L,Q,M) MOSFET P-CH 40V 8A SOP8 2-6J1B

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TPC8110(TE12L,Q,M)

MOSFET P-CH 40V 8A SOP8 2-6J1B

Nambari ya Sehemu

TPC8110(TE12L,Q,M)

Mtengenezaji/Chapa

Toshiba Semiconductor and Storage

Mfululizo

U-MOSIII

Hali ya Sehemu

Obsolete

Ufungaji

Tape & Reel (TR)

Teknolojia

MOSFET (Metal Oxide)

Joto la Uendeshaji

150°C (TJ)

Aina ya Kuweka

Surface Mount

Kifurushi / Kesi

8-SOIC (0.173", 4.40mm Width)

Kifurushi cha Kifaa cha Wasambazaji

8-SOP (5.5x6.0)

Upotezaji wa Nguvu (Upeo)

1W (Ta)

Aina ya FET

P-Channel

Kipengele cha FET

Mimina hadi Chanzo Voltage (Vdss)

40V

Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C

8A (Ta)

Rds On (Max) @ Id, Vgs

25 mOhm @ 4A, 10V

Vgs(th) (Max) @ Kitambulisho

2V @ 1mA

Malipo ya Lango (Qg) (Max) @ Vgs

48nC @ 10V

Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds

2180pF @ 10V

Voltage ya Kuendesha (Max Rds On, Min Rds On)

4V, 10V

Vgs (Upeo)

±20V

Omba Nukuu

Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.

Katika Hisa 48303 PCS

Maelezo ya Mawasiliano

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