Nunua Toshiba Semiconductor and Storage TPC8115(TE12L,Q,M) MOSFET P-CH 20V 10A SOP8 2-6J1B

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TPC8115(TE12L,Q,M)

MOSFET P-CH 20V 10A SOP8 2-6J1B

Nambari ya Sehemu

TPC8115(TE12L,Q,M)

Mtengenezaji/Chapa

Toshiba Semiconductor and Storage

Mfululizo

U-MOSIV

Hali ya Sehemu

Obsolete

Ufungaji

Tape & Reel (TR)

Teknolojia

MOSFET (Metal Oxide)

Joto la Uendeshaji

150°C (TJ)

Aina ya Kuweka

Surface Mount

Kifurushi / Kesi

8-SOIC (0.173", 4.40mm Width)

Kifurushi cha Kifaa cha Wasambazaji

8-SOP (5.5x6.0)

Upotezaji wa Nguvu (Upeo)

1W (Ta)

Aina ya FET

P-Channel

Kipengele cha FET

Mimina hadi Chanzo Voltage (Vdss)

20V

Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C

10A (Ta)

Rds On (Max) @ Id, Vgs

10 mOhm @ 5A, 4.5V

Vgs(th) (Max) @ Kitambulisho

1.2V @ 200µA

Malipo ya Lango (Qg) (Max) @ Vgs

115nC @ 5V

Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds

9130pF @ 10V

Voltage ya Kuendesha (Max Rds On, Min Rds On)

1.8V, 4.5V

Vgs (Upeo)

±8V

Omba Nukuu

Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.

Katika Hisa 29197 PCS

Maelezo ya Mawasiliano

Bidhaa Zinazohusiana

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