IRLI640GPBF
MOSFET N-CH 200V 9.9A TO220FP
Nambari ya Sehemu
IRLI640GPBF
Mtengenezaji/Chapa
Mfululizo
-
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi / Kesi
TO-220-3 Full Pack, Isolated Tab
Kifurushi cha Kifaa cha Wasambazaji
TO-220-3
Upotezaji wa Nguvu (Upeo)
40W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
200V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
9.9A (Tc)
Rds On (Max) @ Id, Vgs
180 mOhm @ 5.9A, 5V
Vgs(th) (Max) @ Kitambulisho
2V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
66nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
1800pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
4V, 5V
Vgs (Upeo)
±10V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 23245 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya IRLI640GPBF
IRLI640GPBF Vipengele vya elektroniki
IRLI640GPBF Mauzo
IRLI640GPBF Msambazaji
IRLI640GPBF Msambazaji
IRLI640GPBF Jedwali la data
IRLI640GPBF Picha
IRLI640GPBF Bei
IRLI640GPBF Toa
IRLI640GPBF Bei ya chini
IRLI640GPBF Tafuta
IRLI640GPBF Ununuzi
IRLI640GPBF Chip