SI1054X-T1-GE3
MOSFET N-CH 12V 1.32A SC89-6
Nambari ya Sehemu
SI1054X-T1-GE3
Mtengenezaji/Chapa
Mfululizo
TrenchFET®
Hali ya Sehemu
Obsolete
Ufungaji
Cut Tape (CT)
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
SOT-563, SOT-666
Kifurushi cha Kifaa cha Wasambazaji
SC-89-6
Upotezaji wa Nguvu (Upeo)
236mW (Ta)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
12V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
-
Rds On (Max) @ Id, Vgs
95 mOhm @ 1.32A, 4.5V
Vgs(th) (Max) @ Kitambulisho
1V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
8.57nC @ 5V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
480pF @ 6V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
1.8V, 4.5V
Vgs (Upeo)
±8V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 8499 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
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SI1054X-T1-GE3 Vipengele vya elektroniki
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SI1054X-T1-GE3 Bei
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SI1054X-T1-GE3 Chip