SI2309CDS-T1-GE3
MOSFET P-CH 60V 1.6A SOT23-3
Nambari ya Sehemu
SI2309CDS-T1-GE3
Mtengenezaji/Chapa
Mfululizo
TrenchFET®
Hali ya Sehemu
Active
Ufungaji
Cut Tape (CT)
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
TO-236-3, SC-59, SOT-23-3
Kifurushi cha Kifaa cha Wasambazaji
SOT-23-3 (TO-236)
Upotezaji wa Nguvu (Upeo)
1W (Ta), 1.7W (Tc)
Aina ya FET
P-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
60V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
1.6A (Tc)
Rds On (Max) @ Id, Vgs
345 mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Kitambulisho
3V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
4.1nC @ 4.5V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
210pF @ 30V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 7065 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
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SI2309CDS-T1-GE3 Chip