SI2312CDS-T1-GE3
MOSFET N-CH 20V 6A SOT-23
Nambari ya Sehemu
SI2312CDS-T1-GE3
Mtengenezaji/Chapa
Mfululizo
TrenchFET®
Hali ya Sehemu
Active
Ufungaji
Cut Tape (CT)
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
TO-236-3, SC-59, SOT-23-3
Kifurushi cha Kifaa cha Wasambazaji
SOT-23-3 (TO-236)
Upotezaji wa Nguvu (Upeo)
1.25W (Ta), 2.1W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
20V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
6A (Tc)
Rds On (Max) @ Id, Vgs
31.8 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Kitambulisho
1V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
18nC @ 5V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
865pF @ 10V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
1.8V, 4.5V
Vgs (Upeo)
±8V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa chen_hx1688@hotmail.com, tutajibu haraka iwezekanavyo.
Katika Hisa 20080 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
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SI2312CDS-T1-GE3 Chip