SI2325DS-T1-GE3
MOSFET P-CH 150V 0.53A SOT-23
Nambari ya Sehemu
SI2325DS-T1-GE3
Mtengenezaji/Chapa
Mfululizo
TrenchFET®
Hali ya Sehemu
Active
Ufungaji
Tape & Reel (TR)
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
TO-236-3, SC-59, SOT-23-3
Kifurushi cha Kifaa cha Wasambazaji
SOT-23-3 (TO-236)
Upotezaji wa Nguvu (Upeo)
750mW (Ta)
Aina ya FET
P-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
150V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
530mA (Ta)
Rds On (Max) @ Id, Vgs
1.2 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Kitambulisho
4.5V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
12nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
510pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
6V, 10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 28344 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya SI2325DS-T1-GE3
SI2325DS-T1-GE3 Vipengele vya elektroniki
SI2325DS-T1-GE3 Mauzo
SI2325DS-T1-GE3 Msambazaji
SI2325DS-T1-GE3 Msambazaji
SI2325DS-T1-GE3 Jedwali la data
SI2325DS-T1-GE3 Picha
SI2325DS-T1-GE3 Bei
SI2325DS-T1-GE3 Toa
SI2325DS-T1-GE3 Bei ya chini
SI2325DS-T1-GE3 Tafuta
SI2325DS-T1-GE3 Ununuzi
SI2325DS-T1-GE3 Chip