SI3459BDV-T1-GE3
MOSFET P-CH 60V 2.9A 6-TSOP
Nambari ya Sehemu
SI3459BDV-T1-GE3
Mtengenezaji/Chapa
Mfululizo
TrenchFET®
Hali ya Sehemu
Active
Ufungaji
Cut Tape (CT)
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
SOT-23-6 Thin, TSOT-23-6
Kifurushi cha Kifaa cha Wasambazaji
6-TSOP
Upotezaji wa Nguvu (Upeo)
2W (Ta), 3.3W (Tc)
Aina ya FET
P-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
60V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
2.9A (Tc)
Rds On (Max) @ Id, Vgs
216 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Kitambulisho
3V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
12nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
350pF @ 30V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 34018 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya SI3459BDV-T1-GE3
SI3459BDV-T1-GE3 Vipengele vya elektroniki
SI3459BDV-T1-GE3 Mauzo
SI3459BDV-T1-GE3 Msambazaji
SI3459BDV-T1-GE3 Msambazaji
SI3459BDV-T1-GE3 Jedwali la data
SI3459BDV-T1-GE3 Picha
SI3459BDV-T1-GE3 Bei
SI3459BDV-T1-GE3 Toa
SI3459BDV-T1-GE3 Bei ya chini
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SI3459BDV-T1-GE3 Chip