SI4102DY-T1-GE3
MOSFET N-CH 100V 3.8A 8-SOIC
Nambari ya Sehemu
SI4102DY-T1-GE3
Mtengenezaji/Chapa
Mfululizo
TrenchFET®
Hali ya Sehemu
Active
Ufungaji
Tape & Reel (TR)
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
8-SOIC (0.154", 3.90mm Width)
Kifurushi cha Kifaa cha Wasambazaji
8-SO
Upotezaji wa Nguvu (Upeo)
2.4W (Ta), 4.8W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
100V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
3.8A (Tc)
Rds On (Max) @ Id, Vgs
158 mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Kitambulisho
4V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
11nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
370pF @ 50V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
6V, 10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 52385 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya SI4102DY-T1-GE3
SI4102DY-T1-GE3 Vipengele vya elektroniki
SI4102DY-T1-GE3 Mauzo
SI4102DY-T1-GE3 Msambazaji
SI4102DY-T1-GE3 Msambazaji
SI4102DY-T1-GE3 Jedwali la data
SI4102DY-T1-GE3 Picha
SI4102DY-T1-GE3 Bei
SI4102DY-T1-GE3 Toa
SI4102DY-T1-GE3 Bei ya chini
SI4102DY-T1-GE3 Tafuta
SI4102DY-T1-GE3 Ununuzi
SI4102DY-T1-GE3 Chip