SI4162DY-T1-GE3
MOSFET N-CH 30V 19.3A 8-SOIC
Nambari ya Sehemu
SI4162DY-T1-GE3
Mtengenezaji/Chapa
Mfululizo
TrenchFET®
Hali ya Sehemu
Active
Ufungaji
Cut Tape (CT)
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
8-SOIC (0.154", 3.90mm Width)
Kifurushi cha Kifaa cha Wasambazaji
8-SO
Upotezaji wa Nguvu (Upeo)
2.5W (Ta), 5W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
30V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
19.3A (Tc)
Rds On (Max) @ Id, Vgs
7.9 mOhm @ 20A, 10V
Vgs(th) (Max) @ Kitambulisho
3V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
30nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
1155pF @ 15V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 24458 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
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SI4162DY-T1-GE3 Vipengele vya elektroniki
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SI4162DY-T1-GE3 Msambazaji
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SI4162DY-T1-GE3 Jedwali la data
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SI4162DY-T1-GE3 Bei
SI4162DY-T1-GE3 Toa
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SI4162DY-T1-GE3 Chip