SI4431CDY-T1-GE3
MOSFET P-CH 30V 9A 8-SOIC
Nambari ya Sehemu
SI4431CDY-T1-GE3
Mtengenezaji/Chapa
Mfululizo
TrenchFET®
Hali ya Sehemu
Active
Ufungaji
Digi-Reel®
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
8-SOIC (0.154", 3.90mm Width)
Kifurushi cha Kifaa cha Wasambazaji
8-SO
Upotezaji wa Nguvu (Upeo)
2.5W (Ta), 4.2W (Tc)
Aina ya FET
P-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
30V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
9A (Tc)
Rds On (Max) @ Id, Vgs
32 mOhm @ 7A, 10V
Vgs(th) (Max) @ Kitambulisho
2.5V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
38nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
1006pF @ 15V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 41186 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya SI4431CDY-T1-GE3
SI4431CDY-T1-GE3 Vipengele vya elektroniki
SI4431CDY-T1-GE3 Mauzo
SI4431CDY-T1-GE3 Msambazaji
SI4431CDY-T1-GE3 Msambazaji
SI4431CDY-T1-GE3 Jedwali la data
SI4431CDY-T1-GE3 Picha
SI4431CDY-T1-GE3 Bei
SI4431CDY-T1-GE3 Toa
SI4431CDY-T1-GE3 Bei ya chini
SI4431CDY-T1-GE3 Tafuta
SI4431CDY-T1-GE3 Ununuzi
SI4431CDY-T1-GE3 Chip