SI4472DY-T1-GE3
MOSFET N-CH 150V 7.7A 8-SOIC
Nambari ya Sehemu
SI4472DY-T1-GE3
Mtengenezaji/Chapa
Mfululizo
-
Hali ya Sehemu
Last Time Buy
Ufungaji
Tape & Reel (TR)
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
8-SOIC (0.154", 3.90mm Width)
Kifurushi cha Kifaa cha Wasambazaji
8-SO
Upotezaji wa Nguvu (Upeo)
3.1W (Ta), 5.9W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
150V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
7.7A (Tc)
Rds On (Max) @ Id, Vgs
45 mOhm @ 5A, 10V
Vgs(th) (Max) @ Kitambulisho
4.5V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
43nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
1735pF @ 50V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
8V, 10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 44362 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
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