SI4561DY-T1-GE3
MOSFET N/P-CH 40V 6.8A 8-SOIC
Nambari ya Sehemu
SI4561DY-T1-GE3
Mtengenezaji/Chapa
Mfululizo
TrenchFET®
Hali ya Sehemu
Obsolete
Ufungaji
Cut Tape (CT)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
8-SOIC (0.154", 3.90mm Width)
Nguvu - Max
3W, 3.3W
Kifurushi cha Kifaa cha Wasambazaji
8-SO
Aina ya FET
N and P-Channel
Kipengele cha FET
Logic Level Gate
Mimina hadi Chanzo Voltage (Vdss)
40V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
6.8A, 7.2A
Rds On (Max) @ Id, Vgs
35.5 mOhm @ 5A, 10V
Vgs(th) (Max) @ Kitambulisho
3V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
20nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
640pF @ 20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 21137 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya SI4561DY-T1-GE3
SI4561DY-T1-GE3 Vipengele vya elektroniki
SI4561DY-T1-GE3 Mauzo
SI4561DY-T1-GE3 Msambazaji
SI4561DY-T1-GE3 Msambazaji
SI4561DY-T1-GE3 Jedwali la data
SI4561DY-T1-GE3 Picha
SI4561DY-T1-GE3 Bei
SI4561DY-T1-GE3 Toa
SI4561DY-T1-GE3 Bei ya chini
SI4561DY-T1-GE3 Tafuta
SI4561DY-T1-GE3 Ununuzi
SI4561DY-T1-GE3 Chip