SI4654DY-T1-GE3
MOSFET N-CH 25V 28.6A 8-SOIC
Nambari ya Sehemu
SI4654DY-T1-GE3
Mtengenezaji/Chapa
Mfululizo
TrenchFET®
Hali ya Sehemu
Obsolete
Ufungaji
Tape & Reel (TR)
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
8-SOIC (0.154", 3.90mm Width)
Kifurushi cha Kifaa cha Wasambazaji
8-SO
Upotezaji wa Nguvu (Upeo)
2.5W (Ta), 5.9W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
25V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
28.6A (Tc)
Rds On (Max) @ Id, Vgs
4 mOhm @ 15A, 10V
Vgs(th) (Max) @ Kitambulisho
2.5V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
100nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
3770pF @ 15V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Upeo)
±16V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 5088 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya SI4654DY-T1-GE3
SI4654DY-T1-GE3 Vipengele vya elektroniki
SI4654DY-T1-GE3 Mauzo
SI4654DY-T1-GE3 Msambazaji
SI4654DY-T1-GE3 Msambazaji
SI4654DY-T1-GE3 Jedwali la data
SI4654DY-T1-GE3 Picha
SI4654DY-T1-GE3 Bei
SI4654DY-T1-GE3 Toa
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SI4654DY-T1-GE3 Ununuzi
SI4654DY-T1-GE3 Chip