SI4840BDY-T1-E3
MOSFET N-CH 40V 19A 8SOIC
Nambari ya Sehemu
SI4840BDY-T1-E3
Mtengenezaji/Chapa
Mfululizo
TrenchFET®
Hali ya Sehemu
Active
Ufungaji
Digi-Reel®
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
8-SOIC (0.154", 3.90mm Width)
Kifurushi cha Kifaa cha Wasambazaji
8-SO
Upotezaji wa Nguvu (Upeo)
2.5W (Ta), 6W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
40V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
19A (Tc)
Rds On (Max) @ Id, Vgs
9 mOhm @ 12.4A, 10V
Vgs(th) (Max) @ Kitambulisho
3V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
50nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
2000pF @ 20V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 41944 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya SI4840BDY-T1-E3
SI4840BDY-T1-E3 Vipengele vya elektroniki
SI4840BDY-T1-E3 Mauzo
SI4840BDY-T1-E3 Msambazaji
SI4840BDY-T1-E3 Msambazaji
SI4840BDY-T1-E3 Jedwali la data
SI4840BDY-T1-E3 Picha
SI4840BDY-T1-E3 Bei
SI4840BDY-T1-E3 Toa
SI4840BDY-T1-E3 Bei ya chini
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SI4840BDY-T1-E3 Chip