SI4952DY-T1-GE3
MOSFET 2N-CH 25V 8A 8-SOIC
Nambari ya Sehemu
SI4952DY-T1-GE3
Mtengenezaji/Chapa
Mfululizo
TrenchFET®
Hali ya Sehemu
Obsolete
Ufungaji
Tape & Reel (TR)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
8-SOIC (0.154", 3.90mm Width)
Nguvu - Max
2.8W
Kifurushi cha Kifaa cha Wasambazaji
8-SO
Aina ya FET
2 N-Channel (Dual)
Kipengele cha FET
Logic Level Gate
Mimina hadi Chanzo Voltage (Vdss)
25V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
8A
Rds On (Max) @ Id, Vgs
23 mOhm @ 7A, 10V
Vgs(th) (Max) @ Kitambulisho
2.2V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
18nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
680pF @ 13V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 5232 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya SI4952DY-T1-GE3
SI4952DY-T1-GE3 Vipengele vya elektroniki
SI4952DY-T1-GE3 Mauzo
SI4952DY-T1-GE3 Msambazaji
SI4952DY-T1-GE3 Msambazaji
SI4952DY-T1-GE3 Jedwali la data
SI4952DY-T1-GE3 Picha
SI4952DY-T1-GE3 Bei
SI4952DY-T1-GE3 Toa
SI4952DY-T1-GE3 Bei ya chini
SI4952DY-T1-GE3 Tafuta
SI4952DY-T1-GE3 Ununuzi
SI4952DY-T1-GE3 Chip