SI5402BDC-T1-GE3
MOSFET N-CH 30V 4.9A 1206-8
Nambari ya Sehemu
SI5402BDC-T1-GE3
Mtengenezaji/Chapa
Mfululizo
TrenchFET®
Hali ya Sehemu
Obsolete
Ufungaji
Tape & Reel (TR)
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
8-SMD, Flat Lead
Kifurushi cha Kifaa cha Wasambazaji
1206-8 ChipFET™
Upotezaji wa Nguvu (Upeo)
1.3W (Ta)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
30V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
4.9A (Ta)
Rds On (Max) @ Id, Vgs
35 mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Kitambulisho
3V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
20nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
-
Voltage ya Kuendesha (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 25545 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya SI5402BDC-T1-GE3
SI5402BDC-T1-GE3 Vipengele vya elektroniki
SI5402BDC-T1-GE3 Mauzo
SI5402BDC-T1-GE3 Msambazaji
SI5402BDC-T1-GE3 Msambazaji
SI5402BDC-T1-GE3 Jedwali la data
SI5402BDC-T1-GE3 Picha
SI5402BDC-T1-GE3 Bei
SI5402BDC-T1-GE3 Toa
SI5402BDC-T1-GE3 Bei ya chini
SI5402BDC-T1-GE3 Tafuta
SI5402BDC-T1-GE3 Ununuzi
SI5402BDC-T1-GE3 Chip