SI6467BDQ-T1-GE3
MOSFET P-CH 12V 6.8A 8TSSOP
Nambari ya Sehemu
SI6467BDQ-T1-GE3
Mtengenezaji/Chapa
Mfululizo
TrenchFET®
Hali ya Sehemu
Obsolete
Ufungaji
Cut Tape (CT)
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
8-TSSOP (0.173", 4.40mm Width)
Kifurushi cha Kifaa cha Wasambazaji
8-TSSOP
Upotezaji wa Nguvu (Upeo)
1.05W (Ta)
Aina ya FET
P-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
12V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
6.8A (Ta)
Rds On (Max) @ Id, Vgs
12.5 mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Kitambulisho
850mV @ 450µA
Malipo ya Lango (Qg) (Max) @ Vgs
70nC @ 4.5V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
-
Voltage ya Kuendesha (Max Rds On, Min Rds On)
1.8V, 4.5V
Vgs (Upeo)
±8V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 17842 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya SI6467BDQ-T1-GE3
SI6467BDQ-T1-GE3 Vipengele vya elektroniki
SI6467BDQ-T1-GE3 Mauzo
SI6467BDQ-T1-GE3 Msambazaji
SI6467BDQ-T1-GE3 Msambazaji
SI6467BDQ-T1-GE3 Jedwali la data
SI6467BDQ-T1-GE3 Picha
SI6467BDQ-T1-GE3 Bei
SI6467BDQ-T1-GE3 Toa
SI6467BDQ-T1-GE3 Bei ya chini
SI6467BDQ-T1-GE3 Tafuta
SI6467BDQ-T1-GE3 Ununuzi
SI6467BDQ-T1-GE3 Chip