SI9410BDY-T1-GE3
MOSFET N-CH 30V 6.2A 8SOIC
Nambari ya Sehemu
SI9410BDY-T1-GE3
Mtengenezaji/Chapa
Mfululizo
TrenchFET®
Hali ya Sehemu
Obsolete
Ufungaji
Tape & Reel (TR)
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
8-SOIC (0.154", 3.90mm Width)
Kifurushi cha Kifaa cha Wasambazaji
8-SO
Upotezaji wa Nguvu (Upeo)
1.5W (Ta)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
30V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
6.2A (Ta)
Rds On (Max) @ Id, Vgs
24 mOhm @ 8.1A, 10V
Vgs(th) (Max) @ Kitambulisho
3V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
23nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
-
Voltage ya Kuendesha (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 16610 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya SI9410BDY-T1-GE3
SI9410BDY-T1-GE3 Vipengele vya elektroniki
SI9410BDY-T1-GE3 Mauzo
SI9410BDY-T1-GE3 Msambazaji
SI9410BDY-T1-GE3 Msambazaji
SI9410BDY-T1-GE3 Jedwali la data
SI9410BDY-T1-GE3 Picha
SI9410BDY-T1-GE3 Bei
SI9410BDY-T1-GE3 Toa
SI9410BDY-T1-GE3 Bei ya chini
SI9410BDY-T1-GE3 Tafuta
SI9410BDY-T1-GE3 Ununuzi
SI9410BDY-T1-GE3 Chip