SIHG33N65E-GE3
MOSFET N-CH 650V 32.4A TO-247AC
Nambari ya Sehemu
SIHG33N65E-GE3
Mtengenezaji/Chapa
Mfululizo
-
Hali ya Sehemu
Active
Ufungaji
Cut Tape (CT)
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi / Kesi
TO-247-3
Kifurushi cha Kifaa cha Wasambazaji
TO-247AC
Upotezaji wa Nguvu (Upeo)
313W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
650V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
32.4A (Tc)
Rds On (Max) @ Id, Vgs
105 mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Kitambulisho
4V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
173nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
4040pF @ 100V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±30V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 21603 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya SIHG33N65E-GE3
SIHG33N65E-GE3 Vipengele vya elektroniki
SIHG33N65E-GE3 Mauzo
SIHG33N65E-GE3 Msambazaji
SIHG33N65E-GE3 Msambazaji
SIHG33N65E-GE3 Jedwali la data
SIHG33N65E-GE3 Picha
SIHG33N65E-GE3 Bei
SIHG33N65E-GE3 Toa
SIHG33N65E-GE3 Bei ya chini
SIHG33N65E-GE3 Tafuta
SIHG33N65E-GE3 Ununuzi
SIHG33N65E-GE3 Chip