SIR410DP-T1-GE3
MOSFET N-CH 20V 35A PPAK SO-8
Nambari ya Sehemu
SIR410DP-T1-GE3
Mtengenezaji/Chapa
Mfululizo
TrenchFET®
Hali ya Sehemu
Active
Ufungaji
Tape & Reel (TR)
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
PowerPAK® SO-8
Kifurushi cha Kifaa cha Wasambazaji
PowerPAK® SO-8
Upotezaji wa Nguvu (Upeo)
4.2W (Ta), 36W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
20V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
35A (Tc)
Rds On (Max) @ Id, Vgs
4.8 mOhm @ 20A, 10V
Vgs(th) (Max) @ Kitambulisho
2.5V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
41nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
1600pF @ 10V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 28067 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya SIR410DP-T1-GE3
SIR410DP-T1-GE3 Vipengele vya elektroniki
SIR410DP-T1-GE3 Mauzo
SIR410DP-T1-GE3 Msambazaji
SIR410DP-T1-GE3 Msambazaji
SIR410DP-T1-GE3 Jedwali la data
SIR410DP-T1-GE3 Picha
SIR410DP-T1-GE3 Bei
SIR410DP-T1-GE3 Toa
SIR410DP-T1-GE3 Bei ya chini
SIR410DP-T1-GE3 Tafuta
SIR410DP-T1-GE3 Ununuzi
SIR410DP-T1-GE3 Chip