SIR432DP-T1-GE3
MOSFET N-CH 100V 28.4A PPAK SO-8
Nambari ya Sehemu
SIR432DP-T1-GE3
Mtengenezaji/Chapa
Mfululizo
TrenchFET®
Hali ya Sehemu
Obsolete
Ufungaji
Tape & Reel (TR)
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
PowerPAK® SO-8
Kifurushi cha Kifaa cha Wasambazaji
PowerPAK® SO-8
Upotezaji wa Nguvu (Upeo)
5W (Ta), 54W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
100V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
28.4A (Tc)
Rds On (Max) @ Id, Vgs
30.6 mOhm @ 8.6A, 10V
Vgs(th) (Max) @ Kitambulisho
4V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
32nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
1170pF @ 50V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
7.5V, 10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 17694 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya SIR432DP-T1-GE3
SIR432DP-T1-GE3 Vipengele vya elektroniki
SIR432DP-T1-GE3 Mauzo
SIR432DP-T1-GE3 Msambazaji
SIR432DP-T1-GE3 Msambazaji
SIR432DP-T1-GE3 Jedwali la data
SIR432DP-T1-GE3 Picha
SIR432DP-T1-GE3 Bei
SIR432DP-T1-GE3 Toa
SIR432DP-T1-GE3 Bei ya chini
SIR432DP-T1-GE3 Tafuta
SIR432DP-T1-GE3 Ununuzi
SIR432DP-T1-GE3 Chip