SIR808DP-T1-GE3
MOSFET N-CH 25V 20A POWERPAK
Nambari ya Sehemu
SIR808DP-T1-GE3
Mtengenezaji/Chapa
Mfululizo
TrenchFET®
Hali ya Sehemu
Obsolete
Ufungaji
Tape & Reel (TR)
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
PowerPAK® SO-8
Kifurushi cha Kifaa cha Wasambazaji
PowerPAK® SO-8
Upotezaji wa Nguvu (Upeo)
29.8W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
25V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
20A (Tc)
Rds On (Max) @ Id, Vgs
8.9 mOhm @ 17A, 10V
Vgs(th) (Max) @ Kitambulisho
2.5V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
22.8nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
815pF @ 12.5V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 10178 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya SIR808DP-T1-GE3
SIR808DP-T1-GE3 Vipengele vya elektroniki
SIR808DP-T1-GE3 Mauzo
SIR808DP-T1-GE3 Msambazaji
SIR808DP-T1-GE3 Msambazaji
SIR808DP-T1-GE3 Jedwali la data
SIR808DP-T1-GE3 Picha
SIR808DP-T1-GE3 Bei
SIR808DP-T1-GE3 Toa
SIR808DP-T1-GE3 Bei ya chini
SIR808DP-T1-GE3 Tafuta
SIR808DP-T1-GE3 Ununuzi
SIR808DP-T1-GE3 Chip