SIR880ADP-T1-GE3
MOSFET N-CH 80V 60A PPAK SO-8
Nambari ya Sehemu
SIR880ADP-T1-GE3
Mtengenezaji/Chapa
Mfululizo
TrenchFET®
Hali ya Sehemu
Active
Ufungaji
Cut Tape (CT)
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
PowerPAK® SO-8
Kifurushi cha Kifaa cha Wasambazaji
PowerPAK® SO-8
Upotezaji wa Nguvu (Upeo)
5.4W (Ta), 83W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
80V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
60A (Tc)
Rds On (Max) @ Id, Vgs
6.3 mOhm @ 20A, 10V
Vgs(th) (Max) @ Kitambulisho
3V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
72nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
2289pF @ 40V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 33586 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya SIR880ADP-T1-GE3
SIR880ADP-T1-GE3 Vipengele vya elektroniki
SIR880ADP-T1-GE3 Mauzo
SIR880ADP-T1-GE3 Msambazaji
SIR880ADP-T1-GE3 Msambazaji
SIR880ADP-T1-GE3 Jedwali la data
SIR880ADP-T1-GE3 Picha
SIR880ADP-T1-GE3 Bei
SIR880ADP-T1-GE3 Toa
SIR880ADP-T1-GE3 Bei ya chini
SIR880ADP-T1-GE3 Tafuta
SIR880ADP-T1-GE3 Ununuzi
SIR880ADP-T1-GE3 Chip