SQJ443EP-T1_GE3
MOSFET P-CH 40V 40A POWERPAKSO-8
Nambari ya Sehemu
SQJ443EP-T1_GE3
Mtengenezaji/Chapa
Mfululizo
Automotive, AEC-Q101, TrenchFET®
Hali ya Sehemu
Active
Ufungaji
Cut Tape (CT)
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 175°C (TA)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
PowerPAK® SO-8
Kifurushi cha Kifaa cha Wasambazaji
PowerPAK® SO-8
Upotezaji wa Nguvu (Upeo)
83W (Tc)
Aina ya FET
P-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
40V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
40A (Tc)
Rds On (Max) @ Id, Vgs
29 mOhm @ 18A, 10V
Vgs(th) (Max) @ Kitambulisho
2.5V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
57nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
2030pF @ 20V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 45718 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya SQJ443EP-T1_GE3
SQJ443EP-T1_GE3 Vipengele vya elektroniki
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SQJ443EP-T1_GE3 Jedwali la data
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SQJ443EP-T1_GE3 Bei
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SQJ443EP-T1_GE3 Chip