Triode/MOS tube/transistor/module
Nambari ya Sehemu
LRC (Leshan Radio)
Watengenezaji
NPN, Vceo=50V, Ic=100mA, hfe=80~150
Maelezo
97780 PCS
Katika Hisa
Nambari ya Sehemu
ST (STMicroelectronics)
Watengenezaji
Maelezo
75097 PCS
Katika Hisa
Nambari ya Sehemu
PJSEMI (flat crystal micro)
Watengenezaji
Drain-source voltage (Vdss): 100V, continuous drain current (Id) (at 25°C): 0.17A, gate-source threshold voltage: 1~3V@250uA, drain-source on-resistance: 3.8Ω@Vgs=0.17 A, 4.5V, maximum power dissipation (Ta=25°C): 0.9W, type: N-channel
Maelezo
50825 PCS
Katika Hisa
Nambari ya Sehemu
APM (Jonway Microelectronics)
Watengenezaji
Maelezo
63355 PCS
Katika Hisa
Nambari ya Sehemu
HXY MOSFET (Huaxuanyang Electronics)
Watengenezaji
Maelezo
77155 PCS
Katika Hisa
Nambari ya Sehemu
onsemi (Ansemi)
Watengenezaji
This bipolar power transistor is suitable for general purpose amplifier and switching applications. TIP31, TIP31A, TIP31B, TIP31C (NPN); and TIP32, TIP32A, TIP32B, TIP32C (PNP) are complementary devices
Maelezo
54896 PCS
Katika Hisa
Nambari ya Sehemu
AGM-Semi (core control source)
Watengenezaji
Maelezo
68163 PCS
Katika Hisa
Nambari ya Sehemu
NCE (Wuxi New Clean Energy)
Watengenezaji
P-channel, -30V, -4.1A, 60 milliohms.
Maelezo
95958 PCS
Katika Hisa
Nambari ya Sehemu
onsemi (Ansemi)
Watengenezaji
This is an 8.0 V P-channel power MOSFET.
Maelezo
62841 PCS
Katika Hisa