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AGM206AP
AGM206AP
Nambari ya Sehemu
AGM206AP
Kategoria
Triode/MOS Tube/Transistor > Field Effect Transistor (MOSFET)
Mtengenezaji/Chapa
AGM-Semi (core control source)
Ufungaji
DFN3x3
Ufungashaji
taping
Idadi ya vifurushi
5000
Maelezo
Type: N-Channel Drain-Source Voltage (Vdss): 20V Continuous Drain Current (Id): 60A Power (Pd): 72W On-Resistance (RDS(on)@Vgs,Id): 5.0mΩ@4.5V, 20A Threshold Voltage (Vgs(th)@Id): 0.7V@250uA Gate Charge (Qg@Vgs): [email protected] Input Capacitance (Ciss@Vds): 2.8nF@15V , Vds=20V Id=60A Rds=5.0mΩ ,Working temperature: -55℃~+150℃@(Tj) DFN3*3encapsulation;
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.