AGM-Semi (core control source)
Picha inaweza kuwa uwakilishi.
Angalia vipimo kwa maelezo ya bidhaa.
Angalia vipimo kwa maelezo ya bidhaa.
AGM403A1-KU
N-channel 40V 120A 2.7mΩ
Nambari ya Sehemu
AGM403A1-KU
Kategoria
Triode/MOS Tube/Transistor > Field Effect Transistor (MOSFET)
Mtengenezaji/Chapa
AGM-Semi (core control source)
Ufungaji
PDFN(5x6)
Ufungashaji
taping
Idadi ya vifurushi
3000
Maelezo
Type: N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 120A Power (Pd): 105W On-Resistance (RDS(on)@Vgs,Id): 2.7mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 1.5V@250uA Gate Charge (Qg@Vgs): 20nC@10V Input Capacitance (Ciss@Vds): 3nF@15V Operating Temperature: -55℃~+150℃@(Tj) DFN5*6encapsulation;
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 55499 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya AGM403A1-KU
AGM403A1-KU Vipengele vya elektroniki
AGM403A1-KU Mauzo
AGM403A1-KU Msambazaji
AGM403A1-KU Msambazaji
AGM403A1-KU Jedwali la data
AGM403A1-KU Picha
AGM403A1-KU Bei
AGM403A1-KU Toa
AGM403A1-KU Bei ya chini
AGM403A1-KU Tafuta
AGM403A1-KU Ununuzi
AGM403A1-KU Chip