AGM-Semi (core control source)
Picha inaweza kuwa uwakilishi.
Angalia vipimo kwa maelezo ya bidhaa.
AGM40P30D P-channel 40V 30A 25mΩ

AGM40P30D

P-channel 40V 30A 25mΩ
Nambari ya Sehemu
AGM40P30D
Kategoria
Triode/MOS Tube/Transistor > Field Effect Transistor (MOSFET)
Mtengenezaji/Chapa
AGM-Semi (core control source)
Ufungaji
TO-252
Ufungashaji
taping
Idadi ya vifurushi
2500
Maelezo
Type: P-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 30A Power (Pd): 59W On-Resistance (RDS(on)@Vgs,Id): 25mΩ@10V,20A Threshold Voltage ( Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 27nC@10V Input capacitance (Ciss@Vds): 1.12nF@15V Operating temperature: -55℃~+150℃@(Tj)
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 92045 PCS
Maelezo ya Mawasiliano
Maneno muhimu ya AGM40P30D
AGM40P30D Vipengele vya elektroniki
AGM40P30D Mauzo
AGM40P30D Msambazaji
AGM40P30D Msambazaji
AGM40P30D Jedwali la data
AGM40P30D Picha
AGM40P30D Bei
AGM40P30D Toa
AGM40P30D Bei ya chini
AGM40P30D Tafuta
AGM40P30D Ununuzi
AGM40P30D Chip