onsemi (Ansemi)
Picha inaweza kuwa uwakilishi.
Angalia vipimo kwa maelezo ya bidhaa.
Angalia vipimo kwa maelezo ya bidhaa.
NVD2955T4G
P channel
Nambari ya Sehemu
NVD2955T4G
Kategoria
Triode/MOS Tube/Transistor > Field Effect Transistor (MOSFET)
Mtengenezaji/Chapa
onsemi (Ansemi)
Ufungaji
DPAK-3
Ufungashaji
taping
Idadi ya vifurushi
2500
Maelezo
Automotive power MOSFETs capable of withstanding high energy in avalanche and commutation modes. Suitable for low voltage high speed switching applications in power supplies, converters and power motor control. These devices are especially useful in bridge circuits where diode speed and commutation safe operating regions are critical, providing additional safety margin against unintended transient voltages. AEC-Q101 qualified MOSFETs with Production Part Approval Process (PPAP) capability for automotive applications.
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 64328 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya NVD2955T4G
NVD2955T4G Vipengele vya elektroniki
NVD2955T4G Mauzo
NVD2955T4G Msambazaji
NVD2955T4G Msambazaji
NVD2955T4G Jedwali la data
NVD2955T4G Picha
NVD2955T4G Bei
NVD2955T4G Toa
NVD2955T4G Bei ya chini
NVD2955T4G Tafuta
NVD2955T4G Ununuzi
NVD2955T4G Chip