IPB22N03S4L15ATMA1
MOSFET N-CH 30V 22A TO263-3
Nambari ya Sehemu
IPB22N03S4L15ATMA1
Mtengenezaji/Chapa
Mfululizo
OptiMOS™
Hali ya Sehemu
Active
Ufungaji
Tape & Reel (TR)
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 175°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Wasambazaji
PG-TO263-3-2
Upotezaji wa Nguvu (Upeo)
31W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
30V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
22A (Tc)
Rds On (Max) @ Id, Vgs
14.6 mOhm @ 22A, 10V
Vgs(th) (Max) @ Kitambulisho
2.2V @ 10µA
Malipo ya Lango (Qg) (Max) @ Vgs
14nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
980pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Upeo)
±16V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 47196 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
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