IPB50N10S3L16ATMA1
MOSFET N-CH 100V 50A TO263-3
Nambari ya Sehemu
IPB50N10S3L16ATMA1
Mtengenezaji/Chapa
Mfululizo
OptiMOS™
Hali ya Sehemu
Active
Ufungaji
Digi-Reel®
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 175°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Wasambazaji
PG-TO263-3-2
Upotezaji wa Nguvu (Upeo)
100W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
100V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
50A (Tc)
Rds On (Max) @ Id, Vgs
15.4 mOhm @ 50A, 10V
Vgs(th) (Max) @ Kitambulisho
2.4V @ 60µA
Malipo ya Lango (Qg) (Max) @ Vgs
64nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
4180pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 37457 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
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