IPC100N04S51R2ATMA1
MOSFET N-CH 40V 100A 8TDSON
Nambari ya Sehemu
IPC100N04S51R2ATMA1
Mtengenezaji/Chapa
Mfululizo
OptiMOS™
Hali ya Sehemu
Active
Ufungaji
Cut Tape (CT)
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 175°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
8-PowerTDFN
Kifurushi cha Kifaa cha Wasambazaji
PG-TDSON-8
Upotezaji wa Nguvu (Upeo)
150W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
40V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
100A (Tc)
Rds On (Max) @ Id, Vgs
1.2 mOhm @ 50A, 10V
Vgs(th) (Max) @ Kitambulisho
3.4V @ 90µA
Malipo ya Lango (Qg) (Max) @ Vgs
131nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
7650pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
7V, 10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 45059 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya IPC100N04S51R2ATMA1
IPC100N04S51R2ATMA1 Vipengele vya elektroniki
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IPC100N04S51R2ATMA1 Chip