IPI024N06N3GXKSA1
MOSFET N-CH 60V 120A
Nambari ya Sehemu
IPI024N06N3GXKSA1
Mtengenezaji/Chapa
Mfululizo
OptiMOS™
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 175°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
TO-262-3 Long Leads, I²Pak, TO-262AA
Kifurushi cha Kifaa cha Wasambazaji
PG-TO262-3
Upotezaji wa Nguvu (Upeo)
250W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
60V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
120A (Tc)
Rds On (Max) @ Id, Vgs
2.4 mOhm @ 100A, 10V
Vgs(th) (Max) @ Kitambulisho
4V @ 196µA
Malipo ya Lango (Qg) (Max) @ Vgs
275nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
23000pF @ 30V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 51527 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
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