IPI60R099CPAAKSA1
MOSFET N-CH 60V 31A TO-262
Nambari ya Sehemu
IPI60R099CPAAKSA1
Mtengenezaji/Chapa
Mfululizo
CoolMOS™
Hali ya Sehemu
Not For New Designs
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-40°C ~ 150°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi / Kesi
TO-262-3 Long Leads, I²Pak, TO-262AA
Kifurushi cha Kifaa cha Wasambazaji
PG-TO262-3
Upotezaji wa Nguvu (Upeo)
255W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
600V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
31A (Tc)
Rds On (Max) @ Id, Vgs
105 mOhm @ 18A, 10V
Vgs(th) (Max) @ Kitambulisho
3.5V @ 1.2mA
Malipo ya Lango (Qg) (Max) @ Vgs
80nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
2800pF @ 100V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 38076 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
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IPI60R099CPAAKSA1 Chip