ON Semiconductor
Picha inaweza kuwa uwakilishi.
Angalia vipimo kwa maelezo ya bidhaa.
FQU12N20TU
Tazama Maelezo Zaidi DataSheets

FQU12N20TU

MOSFET N-CH 200V 9A IPAK
Nambari ya Sehemu
FQU12N20TU
Mtengenezaji/Chapa
ON Semiconductor
Mfululizo
QFET®
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi / Kesi
TO-251-3 Short Leads, IPak, TO-251AA
Kifurushi cha Kifaa cha Wasambazaji
I-PAK
Upotezaji wa Nguvu (Upeo)
2.5W (Ta), 55W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
200V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
9A (Tc)
Rds On (Max) @ Id, Vgs
280 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Kitambulisho
5V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
23nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
910pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±30V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 25621 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
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