NP100P04PDG-E1-AY
MOSFET P-CH 40V 100A TO-263
Nambari ya Sehemu
NP100P04PDG-E1-AY
Mtengenezaji/Chapa
Mfululizo
-
Hali ya Sehemu
Active
Ufungaji
Tape & Reel (TR)
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
175°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Wasambazaji
TO-263
Upotezaji wa Nguvu (Upeo)
1.8W (Ta), 200W (Tc)
Aina ya FET
P-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
40V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
100A (Tc)
Rds On (Max) @ Id, Vgs
3.5 mOhm @ 50A, 10V
Vgs(th) (Max) @ Kitambulisho
2.5V @ 1mA
Malipo ya Lango (Qg) (Max) @ Vgs
320nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
15100pF @ 10V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 51083 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
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NP100P04PDG-E1-AY Vipengele vya elektroniki
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NP100P04PDG-E1-AY Msambazaji
NP100P04PDG-E1-AY Msambazaji
NP100P04PDG-E1-AY Jedwali la data
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NP100P04PDG-E1-AY Chip