STD100N10F7
MOSFET N CH 100V 80A DPAK
Nambari ya Sehemu
STD100N10F7
Mtengenezaji/Chapa
Mfululizo
DeepGATE™, STripFET™ VII
Hali ya Sehemu
Active
Ufungaji
Cut Tape (CT)
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 175°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
TO-252-3, DPak (2 Leads + Tab), SC-63
Kifurushi cha Kifaa cha Wasambazaji
DPAK
Upotezaji wa Nguvu (Upeo)
120W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
100V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
80A (Tc)
Rds On (Max) @ Id, Vgs
8 mOhm @ 40A, 10V
Vgs(th) (Max) @ Kitambulisho
4.5V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
61nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
4369pF @ 50V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 22475 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya STD100N10F7
STD100N10F7 Vipengele vya elektroniki
STD100N10F7 Mauzo
STD100N10F7 Msambazaji
STD100N10F7 Msambazaji
STD100N10F7 Jedwali la data
STD100N10F7 Picha
STD100N10F7 Bei
STD100N10F7 Toa
STD100N10F7 Bei ya chini
STD100N10F7 Tafuta
STD100N10F7 Ununuzi
STD100N10F7 Chip