Toshiba Semiconductor and Storage
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TK25E60X,S1X
Tazama Maelezo Zaidi DataSheets

TK25E60X,S1X

MOSFET N-CH 600V 25A TO-220AB
Nambari ya Sehemu
TK25E60X,S1X
Mtengenezaji/Chapa
Toshiba Semiconductor and Storage
Mfululizo
DTMOSIV-H
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
150°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi / Kesi
TO-220-3
Kifurushi cha Kifaa cha Wasambazaji
TO-220
Upotezaji wa Nguvu (Upeo)
180W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
600V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
25A (Ta)
Rds On (Max) @ Id, Vgs
125 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Kitambulisho
3.5V @ 1.2mA
Malipo ya Lango (Qg) (Max) @ Vgs
40nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
2400pF @ 300V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±30V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 30068 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
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