Toshiba Semiconductor and Storage
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TK39J60W,S1VQ
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TK39J60W,S1VQ

MOSFET N-CH 600V 38.8A TO-3P
Nambari ya Sehemu
TK39J60W,S1VQ
Mtengenezaji/Chapa
Toshiba Semiconductor and Storage
Mfululizo
DTMOSIV
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
150°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi / Kesi
TO-3P-3, SC-65-3
Kifurushi cha Kifaa cha Wasambazaji
TO-3P(N)
Upotezaji wa Nguvu (Upeo)
270W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
Super Junction
Mimina hadi Chanzo Voltage (Vdss)
600V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
38.8A (Ta)
Rds On (Max) @ Id, Vgs
65 mOhm @ 19.4A, 10V
Vgs(th) (Max) @ Kitambulisho
3.7V @ 1.9mA
Malipo ya Lango (Qg) (Max) @ Vgs
110nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
4100pF @ 300V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±30V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 23622 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
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