TK6Q65W,S1Q
MOSFET N-CH 650V 5.8A IPAK-OS
Nambari ya Sehemu
TK6Q65W,S1Q
Mtengenezaji/Chapa
Mfululizo
DTMOSIV
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
150°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi / Kesi
TO-251-3 Stub Leads, IPak
Kifurushi cha Kifaa cha Wasambazaji
I-PAK
Upotezaji wa Nguvu (Upeo)
60W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
650V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
5.8A (Ta)
Rds On (Max) @ Id, Vgs
1.05 Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Kitambulisho
3.5V @ 180µA
Malipo ya Lango (Qg) (Max) @ Vgs
11nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
390pF @ 300V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±30V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 33146 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
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