Toshiba Semiconductor and Storage
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TK7A65D(STA4,Q,M)
Tazama Maelezo Zaidi DataSheets

TK7A65D(STA4,Q,M)

MOSFET N-CH 650V 7A TO-220SIS
Nambari ya Sehemu
TK7A65D(STA4,Q,M)
Mtengenezaji/Chapa
Toshiba Semiconductor and Storage
Mfululizo
π-MOSVII
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
150°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi / Kesi
TO-220-3 Full Pack
Kifurushi cha Kifaa cha Wasambazaji
TO-220SIS
Upotezaji wa Nguvu (Upeo)
45W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
650V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
7A (Ta)
Rds On (Max) @ Id, Vgs
980 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Kitambulisho
4V @ 1mA
Malipo ya Lango (Qg) (Max) @ Vgs
24nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
1200pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±30V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 37909 PCS
Maelezo ya Mawasiliano
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