Nunua Toshiba Semiconductor and Storage TK8A55DA(STA4,Q,M) MOSFET N-CH 550V 7.5A TO-220SIS

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TK8A55DA(STA4,Q,M)

MOSFET N-CH 550V 7.5A TO-220SIS

Nambari ya Sehemu

TK8A55DA(STA4,Q,M)

Mtengenezaji/Chapa

Toshiba Semiconductor and Storage

Mfululizo

π-MOSVII

Hali ya Sehemu

Active

Ufungaji

Tube

Teknolojia

MOSFET (Metal Oxide)

Joto la Uendeshaji

150°C (TJ)

Aina ya Kuweka

Through Hole

Kifurushi / Kesi

TO-220-3 Full Pack

Kifurushi cha Kifaa cha Wasambazaji

TO-220SIS

Upotezaji wa Nguvu (Upeo)

40W (Tc)

Aina ya FET

N-Channel

Kipengele cha FET

Mimina hadi Chanzo Voltage (Vdss)

550V

Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C

7.5A (Ta)

Rds On (Max) @ Id, Vgs

1.07 Ohm @ 3.8A, 10V

Vgs(th) (Max) @ Kitambulisho

4V @ 1mA

Malipo ya Lango (Qg) (Max) @ Vgs

16nC @ 10V

Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds

800pF @ 25V

Voltage ya Kuendesha (Max Rds On, Min Rds On)

10V

Vgs (Upeo)

±30V

Omba Nukuu

Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.

Katika Hisa 16536 PCS

Maelezo ya Mawasiliano

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Maneno muhimu ya TK8A55DA(STA4,Q,M)

TK8A55DA(STA4,Q,M) Vipengele vya elektroniki

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TK8A55DA(STA4,Q,M) Bei

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TK8A55DA(STA4,Q,M) Chip