Toshiba Semiconductor and Storage
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TK8A60W,S4VX
Tazama Maelezo Zaidi DataSheets

TK8A60W,S4VX

MOSFET N CH 600V 8A TO-220SIS
Nambari ya Sehemu
TK8A60W,S4VX
Mtengenezaji/Chapa
Toshiba Semiconductor and Storage
Mfululizo
DTMOSIV
Hali ya Sehemu
Active
Ufungaji
Tube
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
150°C (TJ)
Aina ya Kuweka
Through Hole
Kifurushi / Kesi
TO-220-3 Full Pack
Kifurushi cha Kifaa cha Wasambazaji
TO-220SIS
Upotezaji wa Nguvu (Upeo)
30W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
Super Junction
Mimina hadi Chanzo Voltage (Vdss)
600V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
8A (Ta)
Rds On (Max) @ Id, Vgs
500 mOhm @ 4A, 10V
Vgs(th) (Max) @ Kitambulisho
3.7V @ 400µA
Malipo ya Lango (Qg) (Max) @ Vgs
18.5nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
570pF @ 300V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±30V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 21773 PCS
Maelezo ya Mawasiliano
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TK8A60W,S4VX Chip