TPH2900ENH,L1Q
MOSFET N-CH 200V 33A SOP8
Nambari ya Sehemu
TPH2900ENH,L1Q
Mtengenezaji/Chapa
Mfululizo
U-MOSVIII-H
Hali ya Sehemu
Active
Ufungaji
Cut Tape (CT)
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
8-PowerVDFN
Kifurushi cha Kifaa cha Wasambazaji
8-SOP Advance (5x5)
Upotezaji wa Nguvu (Upeo)
78W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
200V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
33A (Ta)
Rds On (Max) @ Id, Vgs
29 mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Kitambulisho
4V @ 1mA
Malipo ya Lango (Qg) (Max) @ Vgs
22nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
2200pF @ 100V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 49639 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
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