SIB456DK-T1-GE3
MOSFET N-CH 100V 6.3A SC75-6L
Nambari ya Sehemu
SIB456DK-T1-GE3
Mtengenezaji/Chapa
Mfululizo
TrenchFET®
Hali ya Sehemu
Active
Ufungaji
Cut Tape (CT)
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
PowerPAK® SC-75-6L
Kifurushi cha Kifaa cha Wasambazaji
PowerPAK® SC-75-6L Single
Upotezaji wa Nguvu (Upeo)
2.4W (Ta), 13W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
100V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
6.3A (Tc)
Rds On (Max) @ Id, Vgs
185 mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Kitambulisho
3V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
5nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
130pF @ 50V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 45463 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya SIB456DK-T1-GE3
SIB456DK-T1-GE3 Vipengele vya elektroniki
SIB456DK-T1-GE3 Mauzo
SIB456DK-T1-GE3 Msambazaji
SIB456DK-T1-GE3 Msambazaji
SIB456DK-T1-GE3 Jedwali la data
SIB456DK-T1-GE3 Picha
SIB456DK-T1-GE3 Bei
SIB456DK-T1-GE3 Toa
SIB456DK-T1-GE3 Bei ya chini
SIB456DK-T1-GE3 Tafuta
SIB456DK-T1-GE3 Ununuzi
SIB456DK-T1-GE3 Chip