SIR770DP-T1-GE3
MOSFET 2N-CH 30V 8A PPAK SO-8
Nambari ya Sehemu
SIR770DP-T1-GE3
Mtengenezaji/Chapa
Mfululizo
TrenchFET®
Hali ya Sehemu
Active
Ufungaji
Digi-Reel®
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
PowerPAK® SO-8 Dual
Nguvu - Max
17.8W
Kifurushi cha Kifaa cha Wasambazaji
PowerPAK® SO-8 Dual
Aina ya FET
2 N-Channel (Dual)
Kipengele cha FET
Logic Level Gate
Mimina hadi Chanzo Voltage (Vdss)
30V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
8A
Rds On (Max) @ Id, Vgs
21 mOhm @ 8A, 10V
Vgs(th) (Max) @ Kitambulisho
2.8V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
21nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
900pF @ 15V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 24065 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya SIR770DP-T1-GE3
SIR770DP-T1-GE3 Vipengele vya elektroniki
SIR770DP-T1-GE3 Mauzo
SIR770DP-T1-GE3 Msambazaji
SIR770DP-T1-GE3 Msambazaji
SIR770DP-T1-GE3 Jedwali la data
SIR770DP-T1-GE3 Picha
SIR770DP-T1-GE3 Bei
SIR770DP-T1-GE3 Toa
SIR770DP-T1-GE3 Bei ya chini
SIR770DP-T1-GE3 Tafuta
SIR770DP-T1-GE3 Ununuzi
SIR770DP-T1-GE3 Chip