SIS822DNT-T1-GE3
MOSFET N-CH 30V 12A POWERPAK1212
Nambari ya Sehemu
SIS822DNT-T1-GE3
Mtengenezaji/Chapa
Mfululizo
-
Hali ya Sehemu
Active
Ufungaji
Tape & Reel (TR)
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
PowerPAK® 1212-8
Kifurushi cha Kifaa cha Wasambazaji
PowerPAK® 1212-8
Upotezaji wa Nguvu (Upeo)
15.6W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
30V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
12A (Tc)
Rds On (Max) @ Id, Vgs
24 mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Kitambulisho
2.5V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
12nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
435pF @ 15V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 34727 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya SIS822DNT-T1-GE3
SIS822DNT-T1-GE3 Vipengele vya elektroniki
SIS822DNT-T1-GE3 Mauzo
SIS822DNT-T1-GE3 Msambazaji
SIS822DNT-T1-GE3 Msambazaji
SIS822DNT-T1-GE3 Jedwali la data
SIS822DNT-T1-GE3 Picha
SIS822DNT-T1-GE3 Bei
SIS822DNT-T1-GE3 Toa
SIS822DNT-T1-GE3 Bei ya chini
SIS822DNT-T1-GE3 Tafuta
SIS822DNT-T1-GE3 Ununuzi
SIS822DNT-T1-GE3 Chip