SISH116DN-T1-GE3
MOSFET N-CH 40V PPAK 1212-8SH
Nambari ya Sehemu
SISH116DN-T1-GE3
Mtengenezaji/Chapa
Mfululizo
TrenchFET®
Hali ya Sehemu
Active
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
PowerPAK® 1212-8SH
Kifurushi cha Kifaa cha Wasambazaji
PowerPAK® 1212-8SH
Upotezaji wa Nguvu (Upeo)
1.5W (Ta)
Aina ya FET
N-Channel
Mimina hadi Chanzo Voltage (Vdss)
40V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
10.5A (Ta)
Rds On (Max) @ Id, Vgs
7.8 mOhm @ 16.4A, 10V
Vgs(th) (Max) @ Kitambulisho
2.5V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
23nC @ 4.5V
Vgs (Upeo)
±20V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
4.5V, 10V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 40926 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya SISH116DN-T1-GE3
SISH116DN-T1-GE3 Vipengele vya elektroniki
SISH116DN-T1-GE3 Mauzo
SISH116DN-T1-GE3 Msambazaji
SISH116DN-T1-GE3 Msambazaji
SISH116DN-T1-GE3 Jedwali la data
SISH116DN-T1-GE3 Picha
SISH116DN-T1-GE3 Bei
SISH116DN-T1-GE3 Toa
SISH116DN-T1-GE3 Bei ya chini
SISH116DN-T1-GE3 Tafuta
SISH116DN-T1-GE3 Ununuzi
SISH116DN-T1-GE3 Chip